Through-Silicon Vias (TSV) provide the essential interconnects for high-bandwidth memory (HBM) stacking, silicon interposers, and emerging 3D chip stacking between DRAM chips. However, as TSV dimensions continue to shrink, their manufacturing cost becomes increasingly high, and the process is more prone to defects.
TSVs (through-silicon vias) are critical for integrating MEMS, RF, analog ICs, GPUs, and other devices. They enhance the performance of individual chips and serve as vertical transmission lines for high-frequency electrical signals, thereby improving the overall performance of multi-chip systems. However, as overall device density increases, TSV density also rises. This, in turn, demands smaller via pitches and/or smaller TSV sizes, as well as smaller micro-bumps, all of which can lead to signal integrity issues. These challenges necessitate new shielding methods and accelerate the transition toward hybrid bonding technologies.